| 摘要 |
A method of forming a gate electrode in a semiconductor device which can easily perform gate re-oxidation process without transforming the morphology of the gate electrode, is disclosed. According to the present invention, a gate oxide layer, a doped polysilicon layer, a barrier metal layer and a refractory metal layer are formed on a semiconductor substrate, in sequence. A hard mask is then formed on the refractory metal. Next, the refractory metal layer, the barrier metal layer and the polysilicon layer are etched using the hard mask as an etch mask to form a gate electrode. A spacer for oxidation barrier is then formed on the side wall of the gate electrode and the hard mask. Thereafter, gate re-oxidation process is performed using the spacer as an oxidation mask to form a re-oxidation layer on the substrate of both sides of the spacer. The spacer is formed of a nitride layer such as a SiON layer or a Si4N3 layer. Furthermore, the spacer is formed to the thickness of 50 to 300 Å.
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