Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants

摘要

A method of forming a retrograde channel concentration profile in the NMOS region of a semiconductor device and forming a shallow LDD regions in a PMOS region of the semiconductor device. The retrograde channel concentration profile in the NMOS regions is formed by implanting nitrogen and boron ions into the NMOS region at selected concentrations and implantation energy levels. The nitrogen ions are implanted in the NMOS region at a selected concentration in the range of 1x1013 to 2x1015 ions per cm2 and at a selected implantation energy in the range of 10-100 KeV. The boron ions are implanted in the NMOS region at a selected concentration in the range of 1x1012 to 1x1014 ions per cm2 and at a selected implantation energy in the range of 5-50 KeV. The shallow LDD regions in the PMOS region are formed by implanting nitrogen and boron ions into the PMOS region at selected concentrations and implantation energy levels. The nitrogen ions are implanted in the PMOS region at a selected concentration in the range of 1x1013 to 2x1015 ions per cm2 and at a selected implantation energy in the range of 5-50 Kev. The boron ions are implanted in the PMOS region in a selected concentration in the range of 1x1014 to 5x1015 ions per cm2 and at a selected implantation energy in the range of 10-20 KeV.