| 摘要 |
In one aspect, the invention includes a semiconductor processing method comprising: a) forming a layer comprising boron and nitrogen over a substrate; b) forming a photoresist over the layer comprising boron and nitrogen; and c) exposing one or more portions of the photoresist to light to pattern the photoresist. In another aspect, the invention includes a semiconductor processing method comprising: a) forming a layer comprising boron nitride over a substrate; b) forming a layer of photoresist over the layer comprising boron nitride; c) exposing portions of the photoresist to light while leaving other portions of the photoresist unexposed, some light passing through the photoresist during the exposing; d) absorbing light passing through the photoresist with the layer comprising boron nitride; and e) selectively removing either the exposed or unexposed portions of the photoresist while leaving the other of the exposed and unexposed portions over the substrate to pattern the photoresist. In yet another aspect, the invention includes a semiconductor wafer construction comprising: a) a semiconductive material substrate; b) a layer comprising boron and nitrogen supported by the substrate; and c) a photoresist layer over the layer comprising boron and nitrogen.
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