Nonvolatile semiconductor memory device

摘要

A nonvolatile semiconductor memory device disclosed herein includes: a reference cell held in an ON-state; a reference cell held in an OFF-state; a driving transistor which is turned ON by a signal for reading out data from a memory cell, to supply a current to the memory cell; driving transistors which have a same construction and characteristics as the driving transistor and also which are turned ON by that signal to supply a current to the reference cells; and a sense-amplifier which has a first input terminal supplied with an output voltage of the driving transistor and a second input terminal supplied with an average (VRon+VRoff)/2 of output voltages VRon and VRoff of the driving transistors respectively.