PARTIALLY NON-VOLATILE DYNAMIC RANDOM ACCESS MEMORY

摘要

PROBLEM TO BE SOLVED: To obtain a partially non-volatile dynamic random access memory(PNDRAM). SOLUTION: A partially non-volatile dynamic random access memory PNDRAM uses a DRAM array formed by plural single transistors 1T cells or two transistors 2T cells. The cell is electrically programmable as a non- volatile memory. Therefore, single chip design characteristic of both of a dynamic random access memory DRAM and an electrically programmable read only memory EPROM can be obtained. A DRAM and an EPROM integrated into a PNDRAM can be always and easily reconstituted during manufacturing or in a market. The PNDRAM has plural applications as a single chip such as a main memory related to ID, BIOS, or operating system information and the like.