发明名称 HIGH-SPEED MIRROR SURFACE POLISHING METHOD OF SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To enhance conspicuously a mirror surface polishing speed and obtain a mirror surface in a short time by the small number of steps, by a method wherein a surface of a silicon wafer is processed until it becomes a predetermined surface roughness or less, and this processing surface is polished like a mirror surface by use of an abrasive containing barium carbonate particles. SOLUTION: A surface of a silicon wafer is processed so that a surface roughness is 150 nmRa or less. There is in particular no restriction as a surface processing method, but for example, a lapping method, a grinding method, or the like can be exemplified, and among others, the grinding method is preferable. The reason why the grinding method is preferable is that a damage layer of a wafer by the grinding processing is thinned, and further even though not always clarified, a mechanochemical reaction between the silicon wafer and a barium carbonate particles is easy to advance. After the silicon wafer is processed so that the surface roughness is 150 mnR or less, the processed silicon wafer is further polished by an abrasive containing the barium carbonate particles as abrasive particles to obtain a mirror surface.
申请公布号 JP2001057349(A) 申请公布日期 2001.02.27
申请号 JP19990232203 申请日期 1999.08.19
申请人 SUMITOMO OSAKA CEMENT CO LTD 发明人 KINOSHITA NOBORU;ANDO KAZUTO;YAMAMOTO YOSHITAKA;YASUNAGA NOBUO
分类号 B24B1/00;C08F299/06;C09K3/14;H01L21/304;(IPC1-7):H01L21/304 主分类号 B24B1/00
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