CAPACITOR FOR SEMICONDUCTOR MEMORY ELEMENT AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a capacitor for a semiconductor element that can secure large capacity by preparing a dielectric film having a high dielectric constant that reduces the occurrence of a leakage current. SOLUTION: A bottom electrode 40 is formed on a semiconductor substrate 30. The surface of a bottom electrode is treated so that the generation of a natural oxide film will be impeded. An amorphous TaON film 43 is evaporated on the bottom electrode as a dielectric film. Subsequently, the amorphous TaON film 43 is heat-treated within the range where an amorphous state will be maintained. Then a bottom electrode 44 is formed on a TaON film.