| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor device to be improved in manufacturing yield and reliability without increasing a wiring or the like in resistance when an SiOF film is deposited through a high-density plasma CVD method. SOLUTION: In a method where SiH4 gas, fluorine gas, oxygen gas, and argon gas are introduced into the chamber 101 of a CVD device 100 provided with a high- density plasma generating source to form an SiOF film on a semiconductor substrate W, a bias voltage is applied to the semiconductor substrate W, and the film is deposited on the substrate W keeping the substrate W at a temperature of 325 to 450 deg.C. The gases introduced into the chamber 101 are so regulated in component concentration as to enable fluorine contained in an SiOF film to range from 2 mol% to 7 mol% in concentration. When a film is deposited at a substrate temperature higher than a prescribed temperature range, an Al wiring and a through-hole get too high in resistance, so that a semiconductor device deteriorates in operation speed and product reliability, and when the film is deposited at a lower substrate temperature than a prescribed temperature range, an SiOF film is apt to separate off, and the semiconductor device deteriorates in manufacturing yield. When the SiOF film is deposited keeping the temperature of the substrate within a prescribed range, the device can be enhanced in operation speed, and an SiOF film can be enhanced in manufacturing yield.
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