Method of manufacturing the floating gate of split-gate flash memory

摘要

A method for fabricating the floating gate of a split-gate flash memory. A patterned sacrificial layer is formed over a substrate. A doped polysilicon layer and an insulation layer are formed in sequence over the sacrificial layer. The doped polysilicon layer and the insulation layer above the sacrificial layer are removed by chemical-mechanical polishing. The exposed doped polysilicon layer is removed. Finally, the sacrificial layer is removed to complete the fabrication of the floating gate.