发明名称 Method of production an underfill of a bumped or raised die using a barrier adjacent to the sidewall of a semiconductor device
摘要 A method and apparatus for attaching a semiconductor device to a substrate. One end of the substrate is elevated to position the substrate and the coupled semiconductor device on an inclined plane. An underfill material is introduced along a wall of the semiconductor device located at the elevated end of the inclined substrate with the underfill material being placed between the substrate and the semiconductor device. An optional but preferred additional step of the invention includes coupling a barrier means to the substrate at a point on the substrate adjacent to a sidewall of the semiconductor device located at the lowest point of the slope created by the inclined substrate. The barrier means prevents the underfill material from spreading beyond the sidewalls of the semiconductor device, particularly in instances where the substrate is inclined at a steep angle.
申请公布号 US6194243(B1) 申请公布日期 2001.02.27
申请号 US19990304502 申请日期 1999.05.03
申请人 MICRON TECHNOLOGY, INC. 发明人 AKRAM SALMAN;WARK JAMES M.
分类号 H01L21/56;(IPC1-7):H01L21/00 主分类号 H01L21/56
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