| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a method for manufacturing the same are provided to form a capacitor for increasing an interfacing area between a lower electrode and an upper electrode. CONSTITUTION: An interlayer dielectric(4,5) is formed on a substrate(1). A lower electrode(16) is formed on the interlayer dielectric(4,5). The lower electrode(16) has the first and the second electrode portions(10,13). The first electrode portion(10) has a bottom portion(10a) and a sidewall portion(10b). An inner space is formed by the bottom portion(10a) and the sidewall portion(10b). The first gap is formed between the bottom portion(10a) and the second electrode portion(13). The second gap is formed between the sidewall portion(10b) and the second electrode portion(13). A capacitor dielectric(14) is formed along an exposed region of the sidewall portion(10b) and the bottom portion(10a) of the first electrode portion(10) and an exposed region of the second electrode portion(13). An upper electrode(15) is contacted with the capacitor dielectric(14). The upper electrode(15) is opposed to the second electrode portion(13) and the bottom portion(10a) of the first electrode portion(10) within the first gap. The upper electrode(15) is opposed to the second electrode portion(13) and the sidewall portion(10b) of the first electrode portion(10) within the second gap.
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