| 摘要 |
PURPOSE: To manufacture a storage capacitance part with less processes by providing holes in multilayer structure, forming a pattern that is made of a first insulation film, forming a conductive film and a second insulation film, and forming a lower electrode by etchback. CONSTITUTION: After a contact hole 11 with a depth reaching a substrate is opened, a first insulation film is selectively eliminated and a mask pattern 13 is formed. The mask pattern 13 and a nitride film 7 are covered and at the same time a conductive film 14 is formed so that the inside of the contact hole 11 can be buried. A second insulation film 15 is formed on the conductive film 14, the second insulation film 15 is etched back, and the mask pattern 13 is exposed. Then, with the nitride film 7 as an etching stopper, the mask pattern 13 and the second insulation layer 15 are selectively eliminated, and a cylindrical lower electrode 16 is formed, thus manufacturing a storage capacitance part with less processes.
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