| 摘要 |
PURPOSE: A method is provided to eliminate the need of a process for removing unwanted films formed on the rear surface of a substrate by making an electrostatic chuck usable by making a ferroelectric film formable at a substrate temperature of 400 deg.C less than. CONSTITUTION: In a method for manufacturing dielectric film, an SrxBiy(Ta,Nb)2.0TizOw film(16), having a ferroelectric characteristic, is formed in such a way that a reaction gas is prepared by mixing together at least four kinds of organometallic compounds respectively selected from among a first group composed of organo-Bi compounds, a second group composed of organo-Sr compounds, a third group composed of organo-Ti compounds, and a fourth group composed of organo-Ta and organo-Nb compounds. After an oxidizing gas is mixed with the reaction gas, an oxidized film is formed on a substrate(10) maintained at 400 deg.C less than by chemical vapor growth utilizing plasma energy, by introducing the mixed gas to a reaction chamber in which the substrate(10) is set up. Then the oxidized film is heat-treated in an oxidizing atmosphere.
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