| 摘要 |
PURPOSE: Provided is a nonvolatile semiconductor storage device which can write, erase and read data at a low voltage and at a high speed. CONSTITUTION: This nonvolatile semiconductor storage device is divided into first and second regions I,II, and in the first region I, an n+ layer(9) is formed so as to extend from a source region(3) into under a floating fate(6). A p+ layer(10) is formed in a channel region(4). At reading of data, this p+ layer(10) prevents the occurrence of a short channel effect. Furthermore, a capacity banding ratio of a control gate(8) to the floating gate(6) C1/C2 ratio is preferably 0.8 or higher.
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