| 摘要 |
PURPOSE: A gate oxide layer with two types of thickness is formed in a semiconductor device by making an oxygen diffusion barrier layer to check change of a second thickness of a gate oxide layer during formation of a first thickness of gate oxide especially for CMOS device and circuit. CONSTITUTION: A gate oxide layer (30) is formed to a predetermined first thickness (32) on a substrate (20), and an oxygen diffusion barrier layer (40) is deposited on the gate oxide layer (30). Thereafter, a photoresist mask is selectively patterned on the barrier layer (40). Then, a photoresist mask is removed. Then a gate- dielectric stack structure (10) is subjected to thermal oxidation process, and a new gate oxide layer (30) is formed on a first device (50). The gate oxide layer (30) is selectively formed to a second thickness (34) which is different from the first thickness (32). The oxygen diffusion barrier layer (40) deposited on the gate oxide layer (30) of a second device (60) checks further oxidation of the gate oxide layer (30).
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