| 摘要 |
A method of forming a layer of silicon on a surface of a substrate (10) comprises the steps of depositing silicon on the surface by a physical deposition process such as electron beam evaporation using a silicon source (4) and, during said deposition process, subjecting the forming film to ionic bombardment from an ion gun (20). The resultant silicon film has stresses which are considerably reduced compared to a film produced by an ordinary physical deposition process. This method is particularly well adapted to the formation of relatively thick silicon layers (>=lmum) on a layer (or stack of layers) of silica, to serve as an etching mask in a subsequent deep etching of the silica by reactive ion etching.
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