ETCHING AGENT, PRODUCTION OF SUBSTRATE FOR ELECTRONIC EQUIPMENT USING THE SAME AND ELECTRONIC EQUIPMENT

摘要

PURPOSE: Disclosed is an etching agent capable of etching a Cu film by an easy chemical etching method being a dipping method by rest process in the case that a Cu film of low resistance is used as a wiring material, small in the secular change of the etching grade and capable of preventing the occurrence of a pattern thinning phenomenon caused by the dispersion of the side etching amount of the Cu film. CONSTITUTION: This etching agent consists of an aq. soln. contg. potassium peroxymonosulfate monohydrogen and hydrofluoric acid. In this method for producing a thin film transistor substrate, on the surface of a laminated film obtained. by successively laminating a Ti film or a Ti alloy(3) and a Cu film(4) on a substrate(2) masks of prescribed patterns are formed, the laminated film is subjected to etching by using the etching agent having the composition., and a gate electrode(5) (laminated wiring) and a lower pad layer (laminated wiring)(16b) of the prescribed patterns are formed.