| 摘要 |
<p>PURPOSE: To fully suppress wiring resistance regardless of the occurrence of dishing, in a semiconductor device with an electrode or wiring such as a storage device, an information processor, etc. CONSTITUTION: An interlayer film layer 24 is made via a barrier film 22 on a first n-1 wiring layer 10. An n-th wiring layer 12 is made on the interlayer film layer 24. A damascene structure of wiring 38 is made in the wiring layer 12 and the interlayer film layer 24. The wiring 38 has a wiring part 42 which is narrow in line width and a pad part 44 wide in line width. The insulating film of the wiring layer 12 is provided with a recess 46, corresponding to the wiring part 42 and the pad part 44. The interlayer film 26 of the interlayer film layer 24 is provided with a recess 30 corresponding to the pad part 44. A barrier 34 and a metal film 36 are stacked in the recess 46 and the recess 30, and the excess section is removed through CMP(chemical and mechanical polishing), whereby a multilayer wiring structure is formed.</p> |
