METHOD AND APPARATUS FOR LOCAL CONTROL SIGNAL GENERATION IN A MEMORY DEVICE

摘要

A memory device includes local control signal generators that control timing of operations in each respective block of a memory array. Overall timing of the device is controlled by global control signals generated in a command sequencer and decoder. The global command signals are applied to each of the local command generators along with address bits indicating a selected block. The timing of the global signal generators is determined by row charge and discharge models. Local timing is determined by the global control signals and by local circuitry within the local command generators.