| 摘要 |
PURPOSE: To obtain a Schottky barrier diode in which a barrier height is adjusted accurately and in which a forward characteristic and a backward characteristic can be adjusted, by installing a barrier metal which displays different barrier heights with reference to a semiconductor and which is composed of an alloy of two or more kinds of metal materials combined so as not to form a metal compound. CONSTITUTION: When a Ti-Y alloy by two kinds of metal as a metal Ti and a metal Y is, e.g. a eutectic alloy, its texture shows a texture in which the metal Ti and the metal Y are mixed very fine. Consequently, this Schottky barrier diode SBD which has a barrier metal composed of the Ti-Y alloy has the intermediate barrier height &phgr;b as the barrier height &phgr;b of an SBD in which respective metals are single metal. When the composition of the alloy is adjusted, the SBD having the barrier height &phgr;b which cannot be achieved by a single metal can be obtained, and the electric characteristic of the SBD can be controlled accurately. Consequently, it is possible to obtain the SBD having a forward characteristic and a backward characteristic which cannot be obtained in the SBD which uses a single metal as a barrier metal.
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