发明名称 INERT BARRIER FOR HIGH-CLEANLINESS EPITAXIAL DEPOSITION SYSTEM
摘要 PURPOSE: A processing reactor is provided to prolong the service life of main chamber O-rings and prevent the infiltration of O-ring contaminants into a treating region by arranging vacuum tight seals and nonreactive barriers between upper and lower members forming the treating region. CONSTITUTION: The processing reactor(15) comprises a treating region(18) to receive a depositing gas or heating cleaning gas from an external source via a supply line(30) in an epitaxial silicon chemical vapor deposition cycle or cleaning cycle. Since the region(18) is formed in upper and lower domes(12) and (16) and hermetically sealed with O-rings(52, 54, 56, 58 and 60), barriers(64) and (66) having heat resistances and chemical resistances and prevents the heated depositing reaction product or the heating cleaning gas, which advances into the gap between a liner(118) and the domes(12) and (16) from reaching the O-rings(56) and (58) during the deposition or cleaning cycle. In addition, the barriers(64) and (66) made of the same material prevent the possibility of contaminants or particles produced from the O-rings(50, 52 and 60) reaching and coating the treating region(18).
申请公布号 KR20010015131(A) 申请公布日期 2001.02.26
申请号 KR20000037546 申请日期 2000.07.01
申请人 APPLIED MATERIALS INC. 发明人 DE LOMINIE ROMAIN BEAU;CARLSON DAVID K
分类号 C23C16/44;C30B25/08;H01L21/205;(IPC1-7):H01L21/20 主分类号 C23C16/44
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