发明名称 DEVICE AND METHOD FOR FORMATION OF SPUTTERED FILM
摘要 PURPOSE: To improve workability of a device and to contribute to improving productivity without necessity of resetting a target surface to its initial state by reducing formation of modules on the target surface with a sputter formation device, or the like, provided with an oscillating magnetron magnetic circuit behind the target. CONSTITUTION: A target 20 opposite to a substrate 42 and the magnetron magnetic circuit 24 installed on the back of the target are provided, the magnetron magnetic circuit is oscillated in one direction, and the sputter film is formed on the substrate surface. A control circuit 272, which controls an oscillation speed of the magnetron magnetic circuit, is provided so that a time for sputter etching for each part of the target surface may be continuously at least one second by a plasma area 7 having ability of sputter formed on the target surface with the magnetron magnetic circuit.
申请公布号 KR20010014752(A) 申请公布日期 2001.02.26
申请号 KR20000020265 申请日期 2000.04.18
申请人 ANELVA CORP 发明人 SUZUKI HIDEKAZU;IWATA HIROSHI
分类号 C23C14/35;H01L21/203;H01L21/285;(IPC1-7):H01L21/203 主分类号 C23C14/35
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