| 摘要 |
PURPOSE: Disclosed is a mask for electron beam plotting, where the transmission and the scatter of electrons are controlled, beam contrast is satisfactory, the loss of the exposed electrons is less, the influence of color aberration can be reduced, and exposure time can be shortened. CONSTITUTION: The mask has a pattern-supporting film(6) through which an electron beam passes, an electron beam scatter body pattern(5) formed on the pattern supporting film(6), and a supporting body(3) supporting the pattern supporting film(6) and the electron beam scatter body pattern(5). In the pattern supporting film(6), film thickness is 0.05 micrometer to 0.2 micrometer, film material density is 1.0 to 5.0 g/cm3, and elastic modulus is not less than 0.8x1011 Pa. In the electron beam scatter body pattern(5), film thickness is 0.2 to 2 micrometer, film material density is 1.0 to 5.0 g/cm3, and elastic modulus is not less than 0.8x1011 Pa. |
