| 摘要 |
PURPOSE: To make electric capacity values of storage capacitance uniform, reduce defects such as unevenness of brightness, and improve uniformity of an image by arranging an islanded semiconductor layer pattern larger than an upper electrode between the upper electrode of the storage capacitance and a dielectric substance formed of a 1st insulating film as a gate insulating film of TFTs. CONSTITUTION: Plural pieces of pixel electrodes 7 are arranged in a matrix form, TFTs are arranged corresponding to these pixel electrodes 7, and the pixel electrodes 7 are electrically connected with drain electrodes or a storage capacitance upper electrode 10 via a contact pattern made by hole-etching a 2nd insulating film. Then, an islanded semiconductor pattern 9 larger than the upper electrode 10 is arranged between the upper electrode 10 of the storage capacitance and the dielectric substance formed of a 1st insulating film 3. Thus, the 1st insulating film 3, functioning as the dielectric substance for the storage capacitance, is controlled to be not decreased in the film by being exposed to etching at the patterning process of the islanded semiconductor pattern 9, and the electric capacity values of the storage capacitance can be formed uniform. |
