METHOD OF FORMING SILICON-ON-INSULATOR BODY CONTACT AND BODY CONTACT STRUCTURE

摘要

PURPOSE: A method for forming a silicon-on-insulator body contact and a body contact structure is provided to form an SOI(silicon-on-insulator) structure substrate, having a body contact (a base-body contact) under a gate conductor. CONSTITUTION: A gate conductor on SOI semiconductor structure is partitioned into segments, and the body contact is formed under the gate conductor segment. The body contact is formed by an opening. The opening is extended to a silicon substrate(22) through a TEOS layer(24), an SOI layer(18) and an oxide layer(20). A polysilicon layer(38), a TEOS layer(40) and a polysilicon layer(42) are formed at the opening. Charges stored from a body region under a gate can be removed rapidly by shaping the body contact, and a stable efficient SOI MOSFET can be realized.