RELIABLE DIFFUSION RESISTOR AND DIFFUSION CAPACITOR

摘要

PURPOSE: A diffusion resistor and a diffusion capacitor are provided to make the parasitic capacitance of a diffusion junction very low and to improve reliability. CONSTITUTION: A diffusion resistor(52) is provided that utilizes the block mask to cover only the intrinsic polysilicon gate region. An n-type source/drain doping(60) is implanted in contact regions, but no in an intrinsic polysilicon gate region. An N-type(or P-type) diffusion resistor in P-well(64)(or N-well) is provided that utilizes a block mask to cover only the intrinsic polysilicon gate region. The N-type(or P-type) source/drain doping is implanted in the contact regions but not in the intrinsic polysilicon gate region. A P-well(or N-well) block mask is used to keep the P-well(or N-well) from forming under the buried resistor. Also, provided are a buried capacitor and a method of making both a buried resistor and a buried capacitor.