发明名称 SUBSTRATE TREATER AND SUBSTRATE TREATING METHOD
摘要 PURPOSE: To enhance the uniformity of a treatment of substrates and to raise the yield of the manufacture of the substrates by controlling the temperature of the substrates with high accuracy, in a coating and developing device of a structure wherein a resist, for example, is applied on the surfaces of the substrates and the substrates subsequent to an exposure of the surfaces of the substrates are subjected to a developing treatment. CONSTITUTION: A substrate treater is constituted into such a structure that a coating station S2 for coating a resist on the surfaces of wafers W and a developing station S3 for performing an application of a developing solution are connected with a cassette station S1 for carrying a wafer cassette 22. In the station S3, the wafers W are heated in a heating part, then the wafers W are cooled to a temperature lower than a first temperature in a first cooling part. Subsequently, the wafers W are cooled to a second temperature lower than the first temperature in a second cooling part, and after that, the application of the developing liquid is performed in a developing unit.
申请公布号 KR20010014866(A) 申请公布日期 2001.02.26
申请号 KR20000023940 申请日期 2000.05.04
申请人 TOKYO ELECTRON LTD 发明人 AKUMOTO MASAMI
分类号 H01L21/027;G03F7/16;G03F7/30;H01L21/00;(IPC1-7):H01L21/027 主分类号 H01L21/027
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