| 摘要 |
PURPOSE: To promote miniaturization of dynamic random access memory(DRAM) having a capacitive element using as an electrode material a film containing a platinum group metal, a platinum group alloy or a conductive oxide of the platinum group metal as a main component. CONSTITUTION: Grooves 44 are made in on a silicon oxide film 43, and then a Pt film 45 is formed within the grooves 44 by electroplating for forming a conductive underlying film 42 previously formed on a lower layer of the film 43 as a cathode electrode. Thereafter, the film 32 is etched and removed, and thereafter the underlying film 42 is subjected to a dry etching process with use of the Pt film 45 as a mask, thus forming a lower electrode of a capacitive element with use of the Pt film 45 and the conductive underlying film 42 remaining thereunder.
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