TWIN FILM FIELD EFFECT TRANSISTOR AND USE THEREOF

摘要

PURPOSE: A twin film field effect transistor and a use thereof are provided to form various characteristics of a semiconductor device by providing selectively channels according to input signals. CONSTITUTION: A gate layer(102) is used for receiving an input voltage. The gate layer(102) has a recess gate structure(101). An insulating layer(105) is formed on the gate layer(102). A conductive layer is formed on the insulating layer(105) to transfer a current between a source(104) and a drain(106). The conductive channel layer(120) is formed properly to provide a twin channel. The conductive channel layer(120) has a p-channel and an n-channel. One of the p-channel and the n-channel is responded according to the input voltage.