SEMICONDUCTOR DEVICE HAVING BARRIER METAL LAYER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device having a barrier metal layer and a method for manufacturing the same are provided to form a semiconductor device having an improved barrier characteristic by preventing crystallization of a barrier metal layer. CONSTITUTION: An insulating layer(102) is formed on a semiconductor substrate(101). A through hole(104) is formed in an inside of the insulating layer(102). The first refractory metal nitride layer(106) is formed on a surface of the through hole(104). A surface of the first refractory metal nitride layer(106) is oxidized or oxygen is absorbed on the surface of the first refractory metal nitride layer(106). The second refractory metal nitride layer(108) for absorbing oxygen is formed on the first refractory metal nitride layer(106).