METHOD FOR FORMING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed between the plasma generating region and the substrate. The baffle plate includes a central blocked portion disposed in a center region of the baffle plate. The baffle plate further includes an annular porous portion surrounding the central blocked portion. The annular porous portion includes a plurality of through holes configured for permitting a H 2O plasma generated in the plasma generating region to pass through the holes to reach a surface of the substrate. The plasma processing system also includes a chuck disposed below the baffle plate to support the substrate during the processing.