| 摘要 |
<p>PURPOSE: A light-emitting device is provided to form an ohmic electrode even when the concentration of a carrier in an n-type ZnSe substrate is low, and to prevent a deterioration of an LED. CONSTITUTION: An LED chip(3) is equipped with an n-type ZnSe crystal substrate(7) and an epitaxial light emission layer(8), and is fixed to a lead frame(4a) via a conductive layer(9) made of In or In alloy. Then, the conductive layer(9) is subjected to ohmic contact with the n-type ZnSe crystal substrate(7), and at the same time has a function for bonding the n-type ZnSe crystal substrate(7) to the lead frame(4a), thus obtaining the ohmic contact by a method of allowing the n-type ZnSe crystal substrate(7) to be directly brought into contact with fused In without forming a deposition electrode on the rear surface of the n-type ZnSe crystal substrate(7). Also, silver paste is not used, thus preventing a rapid deterioration of an element.</p> |
