| 摘要 |
PURPOSE: To provide a method for manufacturing a semiconductor device, which allows a reliabile and accurate measurement of alignment marks and overlay inspection marks in a lithography process and which has no unnecessary structure for the marks and which suppresses the generation of contamination during manufacturing processes, to prevent the decline in a manufacturing yield and also provide a semiconductor device manufactured by such a method. CONSTITUTION: A mark structure 100 comprises a gate oxide film 102 formed on a silicon substrate 101, a gate interconnection layer 103 formed on the gate oxide film 102, an insulation film 104 formed on the gate interconnection layer 103, the insulation film 104, the gate interconnection layer 103, and a side wall 105, formed in contact with a side face of the gate oxide film 102. Over an interlayer insulation film 107 and the mark structures 100, an opaque bit line layer 113 constituted of a doped polysilicon layer 1131 and a tungsten silicide layer 1132 is formed. |
