发明名称 |
SEMICONDUCTOR DEVICE, ITS MANUFACTURE, AND COMMUNICATION METHOD |
摘要 |
PURPOSE: To put up a higher barrier at a low cost to the unauthorized use of a user terminal. CONSTITUTION: A channel region 2, a source region 3, and a drain region 4 are formed on a polycrystalline semiconductor layer 1. A polycrystalline TFT 101 varies in characteristics depending on the volume of crystal grain boundaries 6 contained in the channel region 2. A drain current becomes smaller with an increase of grain boundaries 6 in the channel region 2. The TFT 101 is mounted together with a coding circuit on a semiconductor chip or a system so as to use codes obtained by coding the electrical properties of the TFT 101 for discriminating a semiconductor chip or a system. |
申请公布号 |
KR20010014951(A) |
申请公布日期 |
2001.02.26 |
申请号 |
KR20000027227 |
申请日期 |
2000.05.20 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
MAEDA SHIGENOBU;IPPOSHI TAKASHI;KURIYAMA SACHITADA;HONDA HIROMI |
分类号 |
H01L21/822;H01L21/20;H01L21/336;H01L21/8246;H01L23/58;H01L27/04;H01L27/112;H01L29/786;H04L9/32;H04M1/665;H04M1/67;H04W12/12;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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