| 摘要 |
PURPOSE: A method for preparing PGO film as a double-layer structure is provided to control the grain size of a first layer of the PGO film useable for memory cells of 1T type FeRAMs to optimize the quality of the formed film. CONSTITUTION: The method comprises forming a PbGe oxide(PGO) film on an integrated circuit(IC) film which comprises step(102) of mixing Pb(thd)2 with Ge(ETO)4 to form a first PGO mixture having a prescribed mole ratio, a step(104) of dissolving the mixture in the step(102) with solvents of tetrahydrofuran, isopropanol and tetraglyme to form a precursor solution, step(106) of heating the solution formed in the step(104) to produce a precursor gas, step(108) of introducing the precursor gas into the IC film, and step(112) of decomposing the precursor gas produced in the step(106) on the IC film to form a PGO film having strong elastic property and involving a first phase of PbbGe3O11 and a second phase of Pb3GeO5 so that the desired second phase can improve the ferroelectric property of the PGO film.
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