发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas.
申请公布号 US2016222514(A1) 申请公布日期 2016.08.04
申请号 US201514751378 申请日期 2015.06.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 FUJII Motoki;AISO Fumiki;NAGANO Hajime;FUJITSUKA Ryota
分类号 C23C16/455;C23C16/458;C23C16/52;H01L21/02 主分类号 C23C16/455
代理机构 代理人
主权项 1. A semiconductor manufacturing apparatus comprising: a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate; a first supplier supplying a source gas to a first area in the reaction chamber; a second supplier supplying an oxidation gas to a second area in the reaction chamber; a third supplier supplying a hydrogen gas to a third area between the first area and the second area in the reaction chamber; and a stage moving the semiconductor substrate to any one of the first to third areas.
地址 Minato-ku JP