发明名称 |
SEMICONDUCTOR MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor manufacturing apparatus according to an embodiment comprises a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate. A first supplier supplies a source gas to a first area in the reaction chamber. A second supplier supplies an oxidation gas to a second area in the reaction chamber. A third supplier supplies a hydrogen gas to a third area between the first area and the second area in the reaction chamber. A stage moves the semiconductor substrate to any one of the first to third areas. |
申请公布号 |
US2016222514(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201514751378 |
申请日期 |
2015.06.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJII Motoki;AISO Fumiki;NAGANO Hajime;FUJITSUKA Ryota |
分类号 |
C23C16/455;C23C16/458;C23C16/52;H01L21/02 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor manufacturing apparatus comprising:
a reaction chamber in which a semiconductor substrate is capable of being accommodated when a deposited film is to be formed on a surface of the semiconductor substrate; a first supplier supplying a source gas to a first area in the reaction chamber; a second supplier supplying an oxidation gas to a second area in the reaction chamber; a third supplier supplying a hydrogen gas to a third area between the first area and the second area in the reaction chamber; and a stage moving the semiconductor substrate to any one of the first to third areas. |
地址 |
Minato-ku JP |