发明名称 |
SELECTIVE DEPOSITION |
摘要 |
Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition. |
申请公布号 |
US2016222504(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201615013637 |
申请日期 |
2016.02.02 |
申请人 |
ASM IP HOLDING B.V. |
发明人 |
Haukka Suvi P.;Tois Eva |
分类号 |
C23C16/04;C23C16/56;C23C16/18;C23C16/02;C23C16/40;C23C16/34 |
主分类号 |
C23C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
1. A deposition method comprising:
providing a substrate comprising a first surface and a second, different surface, wherein the first surface comprises at least one AHx termination, where A is one or more of N, O, or S and x is from 1 to 2, and the second surface is a H-terminated surface; and contacting the substrate with a first vapor phase precursor comprising Ni, Ti, Fe, or Co; thereby selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface of the substrate relative to the second surface of the same substrate. |
地址 |
Almere NL |