| 摘要 |
PURPOSE: To provide a semiconductor device, the operation speed of which can be increased by reducing the channel length without increasing the gate resistance, and a method for manufacturing the device. CONSTITUTION: An MOSFET is provided with a groove type element isolation structure 2 formed in the main surface of a semiconductor substrate 1, a pair of extensions 3 and source and drain regions 4 both of which are selectively formed in the main surface of the substrate 1 and faced opposite to each other on both sides of a channel region 50, and silicon oxide films 5 formed on the source and drain regions 4 via the element isolation structure 2 and silicon oxide film 12. The MOSFET is also provided with sidewalls 6 formed on the side faces of the silicon oxide films 5, a gate insulating film 7 formed on the main surface of the substrate 1 in the portion where the cannel area 50 is formed, and a gate electrode 8 which is formed so as to fill up the inversely tapered recessed section formed of the side faces of the sidewalls 6 and upper surface of the gate insulating film 7.
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