MANUFACTURE OF CYLINDER STORAGE ELECTRODE OF SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To realize complete contact between a storage electrode and a pad oxide film by entirely removing an exposed part of a silicon nitride film formed as an etching stop film on a pad oxide film when a cylinder storage electrode is formed. SOLUTION: A contact pad 230' is formed to be connected to an active region inside a semiconductor substrate 200 in a first insulation film 220 on a semiconductor substrate 200. A silicon nitride film 240' as an etching stop film is formed on the contact pad 230'. An exposed part of the silicon nitride film 240' is removed to expose the surface of the contact pad 230' by a wet etching method wherein a specified etchant such as phosphoric acid solution is used. Thereby, the silicon nitride film 240' on the contact pad 230' can be completely removed and a contact area between a surface of the contact pad 240' and a storage electrode 270' formed thereon can be maximized.