| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic element, having a metal/semiconductor tunnel junction, which is satisfactory in its matching property with a silicon process. SOLUTION: This manufacturing method of this electronic element consists of following methods: a mask pattern 2 is formed on a silicon substrate 1 and moreover, a nickel thin film 3 is formed on the pattern 2, an annealing treatment is performed at a temperature of 650 deg.C, whereby a silicide/silicon tunnel junction, which uses a silicon layer 5 of a width of 3 nm as its barrier layer and uses silicide layers 4 and 4 formed on both sides of the silicon layer 5 as its electrodes, is formed. In this way, the metal/silicon tunnel junction having a good matching property with a silicon process can be provided. Accordingly, if an electronic element (single electronic element) is formed using this tunnel junction, the constitution of the mixed circuit of a MOS element, which is a representative silicon element, with a single electronic element becomes possible, and the realization of an electronic element of a lower power consumption in comparison with that of a conventional MOS element becomes possible. |
