发明名称 LITHOGRAPHY SYSTEM IN WHICH OPTIMUM PROCESS PARAMETER CAN BE SET AND OPERATION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a lithography system in which an optimum process parameter can be set and a method for its operation. SOLUTION: When a semiconductor wafer is loaded in a spinner 110, a first controller 120 sets an optimum process parameter according to the inputted information on the semiconductor wafer, and controls the spinner 110 according to the set process parameter. When the semiconductor wafer coated with a photo resist film is loaded in a stepper 140, a second controller 150 sets an optimum process parameter based on the inputted information on the semiconductor wafer and controls the stepper 140 according to the set process parameter. Thus, the first and the second controller determine optimum process parameters for a semiconductor wafer based on the inputted wafer information, and a lithography process is executed under the optimum conditions based on the process parameters.
申请公布号 JP2001053001(A) 申请公布日期 2001.02.23
申请号 JP20000202117 申请日期 2000.07.04
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 BOKU SANKUN;CHAE HEE-SUN
分类号 G03F7/26;G03B27/32;G03F7/20;G03F7/22;G03F7/30;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/26
代理机构 代理人
主权项
地址