| 摘要 |
PROBLEM TO BE SOLVED: To provide an end surface emitting thyristor which is efficient in outside light emission efficiency. SOLUTION: For an surface emitting thyristor, an n-type semiconductor layer 12, a p-type semiconductor layer 14, an n-type semiconductor layer 16, and a p-type semiconductor 18 are laminated in this order on an n-type semiconductor substrate 10, and this thyristor is equipped with an anode electrode 20, provided on the p-type semiconductor layer 18 and a gate electrode 22 provided on the n-type semiconductor layer 16. The semiconductor layers 12, 14, and 16 have constrictions between the anode electrode and the gate regions. |
