| 摘要 |
PROBLEM TO BE SOLVED: To enhance the noise resistance of a solid-state image pickup device. SOLUTION: A solid-state image pickup element a of a structure, wherein the element A comprises a plurality of pixels 3 arranged on a substrate 1, vertical charge transfer paths 5 to transfer a charge in the vertical direction, a horizontal charge transfer path to transfer the charge in the horizontal direction, a floating diffusion FD which is arranged adjoining one end of the horizontal charge transfer path, a output amplifier 11 which amplifys a potential in the diffusion FD to output the potential, and a reset transistor 21 to reset the charge, a power terminal OD of the amplifier 21 is connected with the one bonding pad BP1 of bonding pads BP1, BP2 and BP3 and a drain terminal RD of the transistor 21 is connected with another bonding pad BP2, mounted on a chip carrier C and in this element A, above the two bonding pads BP1 and BP2 and a terminal T2, which is connected with a power supply, are connected with each other through separate bonding wires BW1 and BW2.
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