| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, and a fabrication method thereof, in which noise can be reduced in a desired band without requiring an extra filter circuit. SOLUTION: This semiconductor device comprises a semiconductor substrate 10, a first system circuit formed on the semiconductor substrate 10 and operating in a band of first frequency or lower, and a second system circuit formed on the semiconductor substrate 10 and operating in a band of second frequency lower than the first frequency or lower. At least one transistor included in the first system circuit has gate insulating films 14, 24 of first thickness and at least one transistor included in the second system circuit has the gate insulating film 14 of a second thickness which is larger than the first thickness.
|
