| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride compound semiconductor crystal which is processed of a fewer crystal defects and very excellent in crystallinity. SOLUTION: A nitride compound semiconductor crystal which is grown through a conventional crystal growth technique such as an organic metal organic chemical vapor deposition(MO-CVD), a molecular-beam epitaxy(MBE) method, or a vapor phase epitaxy(VPE) is housed in a prescribed vessel where nitrogen can be introduced, and nitrogen of prescribed pressure is introduced into the vessel where the semiconductor crystal is housed, concretely the nitride compound semiconductor crystal is annealed at a prescribed annealing temperature in a nitrogen atmosphere of a higher pressure than a prescribed pressure at which a nitride compound starts dissociating.
|
