| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for forming a ferroelectric thin film having a good crystallization at a low temperature. SOLUTION: Ultra-fine powder 2 of ferroelectric crystal is mixed with a liquid material for an insulator, the mixture is applied to a substrate 1 by spin coating, the substrate is sintered at 450 deg.C and further at 650 deg.C to form a ferroelectric thin film on the substrate 1. That is, the ultra-fine powder of ferroelectric crystal is mixed with the liquid material having a substance of bonded metal elements and organic materials added to an organic solvent, the mixture solution is applied to the substrate, the organic material in the liquid material is dissolved and evaporated to form the ferroelectric thin film on the substrate. Thus, a high quality of ferroelectoric thin film can be formed at a low temperature.
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