| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device, in which the coupling rate between a control gate and a floating gate is improved in order to realize low voltage rewriting of an NV-based semiconductor device, e.g. a flash memory. SOLUTION: In this method for fabricating a semiconductor device/having a vertical stack gate structure of floating gate and control gate, doped polysilicon films 2, 3 formed in the second step is utilized for forming the floating gate, the thickness of the first layer is set at 10 nm or less and hemispherical crystal grains 4 are generated in the surface layer of the second layer doped polysilicon.
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