| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a depth of a fine trench equal to the depth of a large trench can be obtained, while improving productivity. SOLUTION: This method of manufacturing a semiconductor device comprises a step of ion-implanting impurities into a trench formation region 10 on the main surface of a silicon substrate 1, a step of forming trenches 5a-5c, by etching the trench formation region 10 so as to ion-implant the impurities, and to embed the trenches 5a-5c, to form an element isolation insulating region 7.
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