| 摘要 |
PROBLEM TO BE SOLVED: To simplify methods of handling and fixing a work in a rear surface vapor deposition process and prevent defects such as a flaw, crack, etc., due to handling failure or the like. SOLUTION: A photoresist film 18 is formed on the whole surface of a semiconductor wafer 10 by using a spin coater to coat with a photoresist. Subsequently, the photoresist film 18 is baked on a hot plate and cured. Then, the rear surface of the semiconductor wafer is polished and cleaned in a state that the front surface is protected by the photoresist film 18. After polishing and cleaning are finished, the rear surface 16 of the semiconductor wafer is subjected to metal deposition to form a metal film 30 as an electrode while the front surface of the semiconductor wafer on which the photoresist film 18 is formed is being held. |
