| 摘要 |
PROBLEM TO BE SOLVED: To suppress progress of polishing of a copper film during polishing of a barrier metal film when embedded wiring is formed by polishing by a CMP method. SOLUTION: The surface of a silicon substrate 1 is brought into contact with a polishing plate 11 onto which a polishing liquid is supplied, and a copper film 5 is polished in a state that the rear surface of the silicon substrate 11 is pressed by a first pressurizing unit 15 provided with an elastic body having large elastic deformation. Then, the surface of the silicon substrate 1 is brought into contact with the polishing plate 11 onto which a polishing liquid is supplied, and a barrier metal film 4 is polished in a state that the rear surface of the silicon substrate 1 is pressed by a second pressurizing unit 25 provided with an elastic body having small elastic deformation. |
